rev.2.00 sep 07, 2005 page 1 of 6 2sK1637 silicon n channel mos fet rej03g0962-0200 (previous: ade-208-1305) rev.2.00 sep 07, 2005 application high speed power switching features ? low on-resistance ? high speed switching ? low drive current ? no secondary breakdown ? suitable for switching regulator and dc-dc converter outline renesas package code: prss0003ad-a (package name: to-220fm) 1. gate 2. drain 3. source 1 2 3 d g s www..net
2sK1637 rev.2.00 sep 07, 2005 page 2 of 6 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 600 v gate to source voltage v gss 30 v drain current i d 4 a drain peak current i d(pulse) *1 16 a body to drain diode reverse drain current i dr 4 a channel dissipation pch *2 35 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at t c = 25 c electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 600 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 30 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 25 v, v ds = 0 zero gate voltage drain current i dss ? ? 250 a v ds = 500 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 ? 3.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) ? 1.8 2.4 ? i d = 2 a, v gs = 10 v * 3 forward transfer admittance |y fs | 2.2 3.5 ? s i d = 2 a, v ds = 10 v * 3 input capacitance ciss ? 600 ? pf output capacitance coss ? 140 ? pf reverse transfer capacitance crss ? 25 ? pf v ds = 10 v, v gs = 0, f = 1 mhz turn-on delay time t d(on) ? 8 ? ns rise time t r ? 30 ? ns turn-off delay time t d(off) ? 60 ? ns fall time t f ? 35 ? ns i d = 2 a, v gs = 10 v, r l = 15 ? body to drain diode forward voltage v df ? 0.9 ? v i f = 4 a, v gs = 0 body to drain diode reverse recovery time t rr ? 300 ? ns i f = 4 a, v gs = 0, di f /dt = 100 a/ s note: 3. pulse test www..net
2sK1637 rev.2.00 sep 07, 2005 page 3 of 6 main characteristics 5 20 50 drain to source voltage v ds (v) typical output characteristics 4 1 10 30 40 0 2 3 drain current i d (a) v gs = 3.5 v pulse test 4.5 v 6 v 5 v 4 v 10 v 5 410 gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 4 1 268 0 2 3 t c = ?25 c 25 c v ds = 20 v pulse test 75 c 20 820 gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) 16 4 41216 0 8 12 drain to source saturation voltage vs. gate to source voltage pulse test 2 a i d = 5 a 1 a 50 drain current i d (a) static drain to source on state resistance r ds (on) ( ? ) 20 2 1 5 10 static drain to source on state resistance vs. drain current pulse test 0.5 10 v gs = 10 v 15 v 0.2 0.5 1 2 5 20 60 40 20 channel dissipation pch (w) 50 100 150 case temperature t c ( c) power vs. temperature derating 0 50 10 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 30 3 0.3 1 3 10 30 100 300 1,000 0.05 0.1 1 100 s 1 ms pw = 10 m s (1 shot) dc operat ion (t c = 25 c) operation in this area is limited by r ds (on) 10 s ta =25 c www..net
2sK1637 rev.2.00 sep 07, 2005 page 4 of 6 10 40 160 case temperature t c ( c) static drain to source on state resistance r ds (on) ( ? ) 8 2 0 80 120 0 4 6 static drain to source on state resistance vs. temperature ?40 v gs = 10 v pulse test i d = 5 a 2 a 1 a 10 0.1 2 drain current i d (a) 2 0.2 0.2 1 1 0.5 0.05 0.5 forward transfer admittance ? y fs ? (s) forward transfer admittance vs. drain current 5 v ds = 20 v pulse test 75 c t c = ?25 c 5 25 c 0.1 1,000 0.1 2 reverse drain current i dr (a) 500 20 0.2 1 0.05 100 200 10 0.5 reverse recovery time t rr (ns) body to drain diode reverse recovery time di/dt = 100 a/ s, v gs = 0 ta = 25 c 50 5 100 20 50 drain to source voltage v ds (v) capacitance c (pf) 10 30 40 typical capacitance vs. drain to source voltage 0 10 v gs = 0 f = 1 mhz crss coss ciss 1,000 0 1,000 16 40 drain to source voltage v ds (v) dynamic input characteristics 800 200 82432 0 400 600 20 16 4 0 8 12 gate to source voltage v gs (v) 0 250 v 400 v v dd = 100 v v gs v ds v dd = 400 v 250 v 100 v i d = 4 a gate charge qg (nc) 500 reverse drain current i d (a) switching time t (ns) 200 5 50 100 0.1 10 switching characteristics t d (off) 0.5 1 0.2 2 1 0 t f t r t d (on) 20 v gs = 10 v, pw = 2 s duty 1%, v dd 30 v 5 < = = . . www..net
2sK1637 rev.2.00 sep 07, 2005 page 5 of 6 5 0.8 2.0 source to drain voltage v sd (v) reverse drain current i dr (a) 4 0.4 1.2 1.6 2 3 reverse drain current vs. source to drain voltage pulse test 0 1 5 v, 10 v v gs = 0, ?5 v switching time test circuit vin monitor vin 10 v 50 ? d.u.t. vout monitor r l waveforms vin t d (on) 10% t r 90% vout 10% 90% 90% t f t d (off) 10% 3 normalized transient thermal impedance s (t) 1.0 0.1 0.3 10 0.03 0.01 100 10 m 100 m 1 10 1 m normalized transient thermal impedance vs. pulse width pulse width pw (s) t c = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pul se t pw p dm d = t pw ch?c (t) = s (t) ? ch?c ch?c = 3.57 c/w, t c = 25 c v dd = 30 v www..net
2sK1637 rev.2.00 sep 07, 2005 page 6 of 6 package dimensions 10.0 0.3 7.0 0.3 3.2 0.2 12.0 0.3 0.6 2.8 0.2 2.5 0.2 17.0 0.3 14.0 1.0 0.5 0.1 2.5 4.45 0.3 5.0 0.3 2.0 0.3 0.7 0.1 2.54 0.5 2.54 0.5 1.2 0.2 1.4 0.2 package name prss0003ad-a to-220fm / to-220fmv mass[typ.] 1.8g sc-67 renesas code jeita package code unit: mm ordering information part name quantity shipping container 2sK1637-e 500 pcs box (sack) note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product. www..net
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